R8002ANJGTL

制造商 :

Rohm Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

250 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

62W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.3Ohm @ 1A, 10V

Supplier Device Package :

TO-263S

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 1mA