R8002KND3TL1

制造商 :

Rohm Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.6A (Ta)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

140 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

30W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.2Ohm @ 800mA, 10V

Supplier Device Package :

TO-252GE

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 150µA