G3R350MT12D

制造商 :

GeneSiC Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

334 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

74W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

420mOhm @ 4A, 15V

Supplier Device Package :

TO-247-3

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

2.69V @ 2mA