IPL60R104C7AUMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1819 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

4-PowerTSFN

Power Dissipation (Max) :

122W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

104mOhm @ 9.7A, 10V

Supplier Device Package :

PG-VSON-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 490µA