HCT7000M

制造商 :

WEC

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

200mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

60 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-SMD, No Lead

Power Dissipation (Max) :

300mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

5Ohm @ 500mA, 10V

Supplier Device Package :

3-SMD

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±40V

Vgs(th) (Max) @ Id :

3V @ 1mA