RQ1C065UNTR

制造商 :

Rohm Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

6.5A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

870 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power Dissipation (Max) :

700mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

22mOhm @ 6.5A, 4.5V

Supplier Device Package :

TSMT8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 1mA