IPB107N20NAATMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

88A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

87 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7100 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

300W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

10.7mOhm @ 88A, 10V

Supplier Device Package :

PG-TO263-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 270µA