G06NP06S2

制造商 :

Goford Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

6A (Tc)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V, 25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power - Max :

2W (Tc), 2.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 250µA, 3.5V @ 250µA