SSM6P69NU,LF

制造商 :

Toshiba Semiconductor and Storage

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 1.8V Drive

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

6.74nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-WDFN Exposed Pad

Power - Max :

1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

45mOhm @ 3.5A, 10V

Supplier Device Package :

6-µDFN (2x2)

Vgs(th) (Max) @ Id :

1.2V @ 1mA