FF11MR12W1M1B11BOMA1

制造商 :

Rochester Electronics, LLC

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

100A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

7950pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

11mOhm @ 100A, 15V

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

5.55V @ 40mA