F415MR12W2M1B76BOMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

75A (Tj)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

4 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

5.52nF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

15mOhm @ 75A, 15V

Supplier Device Package :

AG-EASY1B-2

Vgs(th) (Max) @ Id :

5.55V @ 30mA