HUF76113DK8T

制造商 :

Rochester Electronics, LLC

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

19.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

605pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VFSOP (0.091", 2.30mm Width)

Power - Max :

2.5W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

32mOhm @ 6A, 10V

Supplier Device Package :

US8

Vgs(th) (Max) @ Id :

3V @ 250µA