MCH6626-TL-E

制造商 :

Rochester Electronics, LLC

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

1.6A, 1A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds :

105pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD, Flat Leads

Power - Max :

800mW

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

230mOhm @ 800mA, 4V

Supplier Device Package :

6-MCPH

Vgs(th) (Max) @ Id :

-