FDY2001PZ

制造商 :

Rochester Electronics, LLC

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

150mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

446mW

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

8Ohm @ 150mA, 4.5V

Supplier Device Package :

SOT-563F

Vgs(th) (Max) @ Id :

1.5V @ 250µA