PDTA123JQBZ

制造商 :

Nexperia USA Inc.

产品分类 :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 5V

Frequency - Transition :

180 MHz

Mounting Type :

Surface Mount, Wettable Flank

Package / Case :

3-XDFN Exposed Pad

Power - Max :

340 mW

Product Status :

Active

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

DFN1110D-3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V