BFP640H6327XTSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA, 3V

Frequency - Transition :

40GHz

Gain :

12.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

PG-SOT343-4

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V