BFR106E6327HTSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

210mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA, 8V

Frequency - Transition :

5GHz

Gain :

8.5dB ~ 13dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

700mW

Product Status :

Active

Supplier Device Package :

PG-SOT23

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V