HFA3102BZ

制造商 :

Renesas Electronics America Inc

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 3V

Frequency - Transition :

10GHz

Gain :

12.4dB ~ 17.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.8dB ~ 2.1dB @ 500MHz ~ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

14-SOIC (0.154", 3.90mm Width)

Power - Max :

250mW

Product Status :

Active

Supplier Device Package :

14-SOIC

Transistor Type :

6 NPN

Voltage - Collector Emitter Breakdown (Max) :

12V