NSVF6001SB6T1G

制造商 :

onsemi

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 30mA, 5V

Frequency - Transition :

6.7GHz

Gain :

11dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

800mW

Product Status :

Active

Supplier Device Package :

6-CPH

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V