NESG2021M16-T3-A

制造商 :

Rochester Electronics, LLC

产品分类 :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

35mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

130 @ 5mA, 2V

Frequency - Transition :

25GHz

Gain :

10dB ~ 18dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz

Operating Temperature :

-

Package / Case :

6-SMD, Flat Leads

Power - Max :

175mW

Product Status :

Obsolete

Supplier Device Package :

M16, 1208

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5V