MMDT3906TB6_R1_00001

制造商 :

Panjit International Inc.

产品分类 :

晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 1V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

SOT-563

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

40V