R1EV58256BDANBI#B2

制造商 :

Renesas Electronics America Inc

产品分类 :

记忆

Access Time :

85 ns

Clock Frequency :

-

Memory Format :

EEPROM

Memory Interface :

Parallel

Memory Size :

256Kb (32K x 8)

Memory Type :

Non-Volatile

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 85°C (TA)

Package / Case :

28-DIP (0.600", 15.24mm)

Product Status :

Last Time Buy

Supplier Device Package :

28-DIP

Technology :

EEPROM

Voltage - Supply :

2.7V ~ 5.5V

Write Cycle Time - Word, Page :

10ms