G5S06506QT

制造商零件编号
G5S06506QT
制造商
Global Power Technology-GPT
包装/箱
-
数据表
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描述
SIC SCHOTTKY DIODE 650V 6A DFN8*
库存:
有库存

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制造商 :
Global Power Technology-GPT
产品分类 :
二极管 - 整流器 - 单
Capacitance @ Vr, F :
395pF @ 0V, 1MHz
Current - Average Rectified (Io) :
34A (DC)
Current - Reverse Leakage @ Vr :
50 µA @ 650 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
4-PowerTSFN
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
4-DFN (8x8)
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.5 V @ 6 A
数据列表
G5S06506QT

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