MURT10060

制造商 :

GeneSiC Semiconductor

产品分类 :

二极管 - 整流器 - 阵列

Current - Average Rectified (Io) (per Diode) :

50A

Current - Reverse Leakage @ Vr :

25 µA @ 50 V

Diode Configuration :

1 Pair Common Cathode

Diode Type :

Standard

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

Three Tower

Product Status :

Active

Reverse Recovery Time (trr) :

75 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

Three Tower

Voltage - DC Reverse (Vr) (Max) :

600 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 100 A